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MMT10B350T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover-triggered crowbar protectors. Turn-off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises.
Features
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BIDIRECTIONAL TSPD ( ) 100 AMP SURGE, 350 VOLTS
* High Surge Current Capability: 100 Amps 10 x 1000 msec, for * * * * * * * *
Controlled Temperature Environments The MMT10B350T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in Non-Semiconductor Devices Fail-Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation Surface Mount Technology (SMT) Indicates UL Recognized - File #E210057 Pb-Free Package is Available
MT1
MT2
SMB (No Polarity) (Essentially JEDEC DO-214AA) CASE 403C
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Off-State Voltage - Maximum Maximum Pulse Surge Short Circuit Current Non-Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 10 x 1000 msec -25C Initial Temperature 2 x 10 msec 10 x 160 msec 10 x 700 msec Maximum Non-Repetitive Rate of Change of On-State Current Double Exponential Waveform, R = 2.4 W, L = 2.0 mH, C = 2.0 mF, Ipk = 110 A Symbol VDM Value 300 Unit V A(pk)
AYWW RPDM G G
IPPS1 IPPS2 IPPS3 IPPS4 di/dt
"100 "500 "200 "180 "100 A/ms
A = Assembly Location Y = Year WW = Work Week RPDM = Device Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MMT10B350T3 MMT10B350T3G Package SMB Shipping 2500/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating.
SMB 2500/Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
1
January, 2006 - Rev. 2
Publication Order Number: MMT10B350T3/D
MMT10B350T3
THERMAL CHARACTERISTICS
Characteristic Operating Temperature Range Blocking or Conducting State Overload Junction Temperature - Maximum Conducting State Only Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol TJ1 TJ2 TL Max -40 to + 125 + 175 260 Unit C C C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) (+65C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kW, t = 0.5 cycle) (Note 3) (+65C) Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities On-State Voltage (IT = 1.0 A) (PW 300 ms, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities Holding Current (Both polarities) (Note 3) VS = 500 V; IT (Initiating Current) = "1.0 A Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = Rated VBR, TJ = 25C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal) 3. Measured under pulse conditions to reduce heating. Symbol V(BO) - - V(BO) - - dV(BO)/dTJ V(BR) ID1 ID2 VT IBO IH dv/dt CO - - - - - - 150 2000 - - - - 0.12 350 - - 1.82 475 300 - 40 81 400 412 - - 2.0 5.0 5.0 - - - - 85 V/C V mA V mA mA V/ms pF - - 400 412 V Min Typ Max Unit V
Voltage Current Characteristic of TSPD (Bidirectional Device)
+ Current
Symbol
ID1, ID2 VD1, VD2 VBR VBO IBO IH VTM
Parameter
Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage + Voltage VD1 VD2 V(BR) IH ID1 ID2 I(BO) VTM V(BO)
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MMT10B350T3
VBR, BREAKDOWN VOLTAGE (VOLTS) 0 20 40 60 80 TEMPERATURE (C) 100 120 140 100 ID1, OFF-STATE CURRENT (mA) VD1 = 50V 10 400 390 380 370 360 350 340 330 320 -60 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120 140
1.0
0.1
0.01
0.001 -60 -40 -20
Figure 1. Typical Off-State Current versus Temperature
Figure 2. Typical Breakdown Voltage versus Temperature
VBO, BREAKOVER VOLTAGE (VOLTS)
440 430 420 410 400 390 380 -60 -40 -20
600 550 IH, Holding Current (mA) 20 40 0 60 80 TEMPERATURE (C) 100 120 140 500 450 400 350 300 250 200 150 100 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120
Figure 3. Maximum Breakover Voltage versus Temperature
420 Peak Value tr = rise time to peak value tf = decay time to half value CURRENT (A) 400 380 360 340 320 300 280 260 240 0 0 tr tf TIME (ms) 220 10
Figure 4. Typical Holding Current versus Temperature
IPP - PEAK PULSE CURRENT - %IPP
100
50
Half Value
100 TIME (sec)
1000
100000
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On-State Current versus Surge Current Duration, Sinusoidal Waveform
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MMT10B350T3
TIP
OUTSIDE PLANT
GND
TELECOM EQUIPMENT
RING
PPTC*
TIP
OUTSIDE PLANT
GND
TELECOM EQUIPMENT
RING
PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE PLANT
GND
TELECOM EQUIPMENT
RING HEAT COIL
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MMT10B350T3
PACKAGE DIMENSIONS
SMB CASE 403C-01 ISSUE A
S A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59
D
B
C
K
P
J
H
SOLDERING FOOTPRINT*
2.261 0.089
2.743 0.108
2.159 0.085
SCALE 8:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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MMT10B350T3/D

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